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Superconductivity in single-crystalline aluminum- and gallium-hyperdoped germanium
Prucnal, S.; Heera, V.; Hübner, R.; Wang, M.; Mazur, G. P.; Grzybowski, M. J.; Qin, X.; Yuan, Y.; Voelskow, M.; Skorupa, W.; Rebohle, L.; Helm, M.; Sawicki, M.; Zhou, S.;
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron-doped diamond and Si, superconductivity has been observed in gallium-doped Ge; however, the obtained specimen is in polycrystalline form [Phys. Rev. Lett. 102, 217003 (2009)]. Here we present superconducting single-crystalline Ge hyperdoped with gallium or aluminum by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is 8 times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 1021 cm−3. Using density functional theory in the local-density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon mediated. According to the ab initio calculations, the critical superconducting temperature for Al- and Ga-doped Ge is in the range of 0.45 K for 6.25at.% of dopant concentration, being in qualitative agreement with experimentally obtained values.
Keywords: superconductivity, ion implantation, Germanium, flash lamp annealing

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Publ.-Id: 29266 - Permalink