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Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission
Shastin, V. N.; Zhukavin, R. K.; Kovalevsky, K. A.; Tsyplenkov, V. V.; Rumyantsev, V. V.; Shengurov, D. V.; Pavlov, S. G.; Shuman, V. B.; Portsel, L. M.; Lodygin, A. N.; Astrov, Y. A.; Abrosimov, N. V.; Klopf, J. M.ORC; Hübers, H.-W.
The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1s(E), 1s(T2), and 2s(A1) parastates determines the possibility for attaining population inversion and the specific mechanism of stimulated Raman scattering. The energy of the 1s(T2) parastate is determined from the position of the Fano resonances in the photoconductivity spectrum of Si:Mg at T = 4 K, and the energies of the 1s(T2) and 1s(E) orthostates from the transmittance spectra at elevated temperatures. On the basis of the experimental data, the relaxation rates are estimated, and the possible mechanisms of stimulated emission are analyzed.
Keywords: neutral double donor magnesium spectroscopy Fano resonance photoconductivity population inversion stimulated Raman scattering
  • Contribution to proceedings
    XXIII International Symposium "Nanophysics and Nanoelectronics", 11.-14.03.2019, Nizhny Novgorod, Russia
    Semiconductors 53(9), 1234-1237
    DOI: 10.1134/S1063782619090197

Publ.-Id: 29662 - Permalink