Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

2 Publications
Filling the 5-10 THz gap using Ge-based photoconductive emitter
Singh, A.; Pashkin, O.ORC; Winnerl, S.; Helm, M.; Schneider, H.
We present here a Ge photoconductive emitter generating THz pulses with a spectrum up to 13 THz free from any absorption lines if detected with a proper detector. Ge is a centrosymmetric non-polar crystal and hence its phonons are not IR-active. Therefore, Ge shows high and almost uniform transmission of THz radiation up to frequencies more than 20 THz besides a weak two-phonon absorption band near 10 THz [1]. Ge also has high carrier mobility required for efficient THz emission. Bowtie-like electrode structures with 10 µm electrode gap are deposited on a pure Ge substrate to fabricate the photoconductive THz emitter. The carrier lifetime in pure Ge is of the order of µs, thus it requires a pump laser with pulse repetition rate less than a MHz. A Ti:sapphire amplified laser system operating at 800 nm wavelength, 250 kHz repetition rate and ~ 65 fs pulse width is used to pump the Ge emitter and probe the radiated THz pulse using the electro optic sampling technique.
[1] A. Singh, A. Pashkin, S. Winnerl, M. Helm and H. Schneider, “Gapless broadband terahertz emission from a germanium photoconductive emitter”, ACS Photonics 5, 2718−2723 (2018).
Keywords: terahertz emitter, germanium
  • Lecture (Conference)
    Conference on Lasers and Electro-Optics (CLEO), 06.-10.05.2019, San José, USA
  • Contribution to proceedings
    Conference on Lasers and Electro-Optics (CLEO), 05.-10.05.2019, San José, USA
    Conference on Lasers and Electro-Optics OSA Technical Digest (Optical Society of America, 2019), 345 E 47TH ST, NEW YORK, NY 10017 USA: IEEE, 978-1-943580-57-6
    DOI: 10.1364/CLEO_SI.2019.STu3F.3

Publ.-Id: 29688 - Permalink