Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication
Pump – Probe THz Spectroscopy Study of Electronic Properties of Semiconductor Nanowires
Fotev, I.ORC; Balaghi, L.ORC; Shan, S.; Hübner, R.; Schmidt, J.; Schneider, H.ORC; Helm, M.; Dimakis, E.ORC; Pashkin, O.ORC
THz radiation is a perfect tool for probing electrical properties of semiconductor nanostructures in a contactless way. When applied to semiconductor nanowires, THz probe pulses can drive the oscillations of photoexcited electrons and holes in the form of localized surface plasmon. We used optical pump – THz probe spectroscopy to study plasmonic response of charge carriers in GaAs/InₓGa₁₋ₓAs core/shell nanowires. The carrier lifetimes are about 80-100 ps, depending on the shell composition and the photoexcitation level, while the extracted mobilities reach 3700 cm²/V·s at room temperature.
Keywords: GaAs nanowires, terahertz spectroscopy, ultrafast dynamics, electron mobility, plasmon, carrier lifetime
  • Lecture (Conference)
    44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 01.-06.09.2019, Paris, France

Publ.-Id: 29706 - Permalink