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Reversible crystalline-to-amorphous phase transformation in monolayer MoS under grazing ion irradiation

Valerius, P.; Kretschmer, S.; V. Senkovskiy, B.; Wu, S.; Hall, J.; Herman, A.; Ehlen, N.; Ghorbani Asl, M.; Grüneis, A.; Krasheninnikov, A.; Michely, T.

By combining scanning tunneling microscopy, low-energy electron diffraction, photoluminescence and Raman spectroscopy experiments with molecular dynamics simulations, a comprehensive picture of the structural and electronic response of a monolayer of MoS2 to 500 eV Xe+ irradiation is obtained. The MoS2 layer is epitaxially grown on graphene/Ir(1 1 1) and analyzed before and after irradiation in situ under ultra-high vacuum conditions. Through optimized irradiation conditions using low-energy ions with grazing trajectories, amorphization of the monolayer is induced already at low ion fluences of 1.5 × 1014 ions cm−2 and without inducing damage underneath the MoS2 layer. The crystalline-to-amorphous transformation is accompanied by changes in the electronic properties from semiconductor-to-metal and an extinction of photoluminescence. Upon thermal annealing, the re-crystallization occurs with restoration of the semiconducting properties, but residual defects prevent the recovery of photoluminescence.

Keywords: 2D materilas, irradiation, defects, atomistic simulations

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  • Secondary publication expected from 06.01.2021

Permalink: https://www.hzdr.de/publications/Publ-31340
Publ.-Id: 31340