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High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Sojkova, M.; Dobročka, E.; Hutár, P.; Tašková, V.; Pribusová-Slušná, L.; Stoklas, R.; Píš, I.; Bondino, F.; Munnik, F.; Hulman, M.

Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of growth conditions onstructural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for the PtSe2 layers grown at elevated temperatures (600 °C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. The charge carrier mobility determined by Hall-effect measurements is up to 24 cm²/V.s

Keywords: PtSe2; epitaxial films; Laue oscillations; Raman spectroscopy

Permalink: https://www.hzdr.de/publications/Publ-31532
Publ.-Id: 31532