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Wafer-scale 4H-silicon carbide-on-insulator (4H–SiCOI) platform for nonlinear integrated optical devices

Yi, A.; Zheng, Y.; Huang, H.; Lin, J.; Yan, Y.; You, T.; Huang, K.; Zhang, S.; Shen, C.; Zhou, M.; Huang, W.; Zhang, J.; Zhou, S.; Ou, H.; Ou, X.

4H-silicon carbide-on-insulator (4H–SiCOI) serves as a novel and high efficient integration platform for nonlinear optics and quantum photonics. The realization of wafer-scale fabrication of single-crystalline semi-insulating 4H–SiC film on Si (100) substrate using the ion-cutting and layer transferring technique was demonstrated in this work. The thermodynamics of 4H–SiC surface blistering is investigated via observing the blistering phenomenon with a series of implanted fluences and annealing temperatures. Surface tomography and the depth dependent film quality of the 4H–SiC have been extensively studied by employing scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Moreover, X-ray diffraction (XRD) was carried out and the diffraction spectrum reveals a narrow peak with a full width at half maximum (FWHM) of 75.6 arcsec, indicating a good maintenance of the single-crystalline phase for the prepared thin film of 4H–SiC as compared to its bulk counterpart. With the single-crystalline 4H–SiCOI, we have successfully fabricated a micro-ring resonator with a quality factor as high as 6.6 × 104. The reported 4H–SiCOI wafer provides a feasible monolithic platform for integrated photonic applications.

Permalink: https://www.hzdr.de/publications/Publ-31534
Publ.-Id: 31534