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Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Prucnal, S.; Liedke, M. O.; Wang, X.; Butterling, M.; Posselt, M.; Knoch, J.; Windgassen, H.; Hirschmann, E.; Berencen, Y.; Rebohle, L.; Wang, M.; Napoltani, E.; Frigerio, J.; Ballabio, A.; Isella, G.; Hübner, R.; Wagner, A.; Bracht, H.; Helm, M.; Zhou, S.

The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n ≤ 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.

Keywords: Ge; vacancies; doping; positron annihilation lifetime spectroscopy; flash lamp annealing

Permalink: https://www.hzdr.de/publications/Publ-31641
Publ.-Id: 31641


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