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Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

Pourteau, M.-L.; Gharbi, A.; Brianceau, P.; Dallery, J.-A.; Laulagnet, F.; Rademaker, G.; Tiron, R.; Engelmann, H.-J.; Borany, J.; Heinig, K.-H.; Rommel, M.; Baier, L.

SETs (Single-Electron-Transistors) arouse growing interest for their very low energy consumption. For future industrialization, it is crucial to show a CMOS-compatible fabrication of SETs, and a key prerequisite is the patterning of sub-20 nm Si Nano-Pillars (NP) with an embedded thin SiO2 layer. In this work, we report the patterning of such multi-layer isolated NP with e-beam lithography combined with a Reactive Ion Etching (RIE) process. The Critical Dimension (CD) uniformity and the robustness of the Process of Reference are evaluated.
Characterization methods, either by CD-SEM for the CD, or by TEM cross-section for the NP profile, are compared and discussed.

Keywords: Single-electron transistor; Multilayer nanopillars; Silicon nanodots; E-beam lithography; Reactive ion etching; Energy-filtered transmission electron microscopy

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Publ.-Id: 32129