Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
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In-situ Characterization of MoS2 Based Field Effect Transistors during Ion Irradiation
Here, in-situ Helium Ion Microscopy (HIM) has been used to electrically characterize single layer MoS 2 field effect transistors. These devices have been fabricated via chemical vapor deposition (CVD) and transferred onto SiO 2 /Si(p ++ ) chips for EBL contacting and further characterization. The oxide thickness is in the range of 200 nm to 300 nm.
Keywords: HIM; helium ion microscopy; MoS2; 2D materials
M&M 2020 - Microscopy & Microanalysis, 03.-07.08.2020, Online, USA
CMD2020GEFES, 31.08.-04.09.2020, Madrid, Spain