Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
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Phase evolution of Te-hyperdoped Si upon furnace annealing
Si hyperdoped with chalcogens via ion implantation and pulsed laser melting is known to exhibit strong room-temperature sub-bandgap photoresponse. As a thermodynamically metastable system, an impairment of the optoelectronic properties in hyperdoped Si materials occurs upon subsequent high-temperature thermal treatment (>500 °C). The substitutional Te atoms that cause the sub-bandgap absorption are removed from the Si matrix to form Te-related complexes, which are electrically and optically inactive. In this work, we explore the formation of defects in Te-hyperdoped Si layers which leads to the electrical deactivation upon furnace annealing through the analysis of optical and microstructural properties as well as positron annihilation lifetime spectroscopy. Particularly, Te-rich clusters are observed in samples thermally annealed at temperatures reaching 950 °C and above. Combined with polarized Raman analysis and transmission electron microscopy, the observed crystalline clusters are suggested to be Si2Te3.
Keywords: Defect analysis; Furnace annealing; Ion-implantation; Positron annihilation spectroscopy; Raman spectroscopy; Silicon telluride; Te-hyperdoped Si; Transmission electron microscopy
Applied Surface Science 567(2021), 150755