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Ion nitriding of Al: growth kinetics and characterisation of the nitride layer
Telbizova, T.; Parascandola, S.; Prokert, F.; Barradas, N. P.; Richter, E.; Möller, W.;
To study the kinetics of Al ion nitriding, a series of experiments has been performed at fixed ion beam parameters using substrate temperatures varied from 250 °C to 400 °C at intervals of 50 °C. The nitride layers have been analysed by nuclear reaction analysis (NRA), elastic recoil detection analysis (ERDA), x-ray diffraction (XRD) and scanning electron microscopy (SEM). Depending on the experimental conditions, the nitriding kinetics shows different character: controlled by the delivery of N ions or by the diffusion of Al atoms. Furthermore, the growth of the nitride layer is limited due to the bad layer adhesion. XRD analysis reveals the formation of a hexagonal AlN-phase plus a small fraction of the cubic AlN-phase.
Keywords: ion nitriding, Al, AlN, growth kinetics, diffusion
  • Surface & Coatings Technology 142-144 (2001) p.1028-1033

Publ.-Id: 3473 - Permalink