Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication
High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation
Ueda, M.; Reuther, H.; Günzel, R.; Beloto, A. F.; Abramof, E.; Berni, L. A.;
PIII was used to dope Si (001) wafers with nitrogen and carbon at high doses, relying on two PIII systems: one at the FZR and the other at INPE.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (2001) 715-720

Publ.-Id: 3999 - Permalink