Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication

Study of the different stages of damage induced by 200 keV Ge+ ion implantation in 6H-SiC

Pacaud, Y.; Brauer, G.; Perez-Rodriguez, A.; Stoemenos, J.; Barklie, R.; Voelskow, M.; Skorupa, W.
  • Contribution to external collection
    IC SCRM 1995, Kyoto, Japan, IOP Publishing

Publ.-Id: 420