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2 Publications

An explanation of trap-limited self-interstitial diffusion and enhanced boron clustering in boron doped silicon superlattices

Jäger, H.-U.
Boron doped crystalline superlattices grown by low-temperature molecular beam epitaxy have been used by Stolk et al. to study the diffusion of self-interstitials I in Si. After 40 keV Si+ ion implantation and subsequent annealing, stationary interstitial profiles are found at 670 °C for periods t ~1 h, demonstrating that the penetration depth of interstitials is limited by trapping at hitherto unidentified impurities. In addition, the high
interstitial supersaturation causes B de-activation in the near-surface region. We show that both these effects, the trap-limited interstitial diffusion and the enhanced B clustering, can be explained, if the transient de-activation of boron is modeled by the first-order reaction I + B_s ->B_i. Boron atomic and electrical profiles as well as self-interstitial profiles are computed which are in good agreement with the experimental results.
  • Lecture (Conference)
    Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, C. S. Murthy and S. T. Dunham, pp. 210-215
  • Contribution to proceedings
    Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, C. S. Murthy and S. T. Dunham, pp. 210-215

Permalink: https://www.hzdr.de/publications/Publ-482
Publ.-Id: 482