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Comment on "Evidence of enhanced epitaxial crystallization at ion temperature by inelastic electronic scattering of mega-electronvolt heavy-ion-beam irradiation"

Heera, V.
The results on epitaxial crystallization of Si by mega-electron-volt heavy-ion-beam irradiation recently published by Nakata can be understood in the framework of the "point defect diffusion model". It is not necessary to consider inelastic electronic scattering effects in order to explain the decrease in the normalized crystallization rate with increasing nuclear deposited energy.
  • Journal of Applied Physics (short communication) 80 (1996) 4235

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Publ.-Id: 523