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Ion Beam Processing of SiC

Skorupa, W.; Heera, V.; Pacaud, Y.; Weishart, H.
A short review is presented concerning problems of ion beam processing of single crystalline silicon carbide. Emphasis is given
to recent results on point defect, extended defects, amorphization and recrystallization, electrical activation of dopant atoms, and metallization.
  • Nuclear Instruments and Methods in Physics Research B 120 (1996) 114-120

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Permalink: https://www.hzdr.de/publications/Publ-553
Publ.-Id: 553