Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
|Total number to be selected: 1 Title record|
Ion Beam Processing of SiCSkorupa, W.; Heera, V.; Pacaud, Y.; Weishart, H.
A short review is presented concerning problems of ion beam processing of single crystalline silicon carbide. Emphasis is given
to recent results on point defect, extended defects, amorphization and recrystallization, electrical activation of dopant atoms, and metallization.
- Nuclear Instruments and Methods in Physics Research B 120 (1996) 114-120
- available with HZDR-Login