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Implantation and growth of large ß-FeSi2 precipitates and a-FeSi2 network structures in silicon

Reuther, H.; Dobler, M.
Iron implanted and subsequently annealed n-type Si(111) was
studied by conversion electron Mössbauer spectroscopy and Auger electron
spectroskopy. Phase analysis performed with Mössbauer spectroscopy indicates
the formation of a mixture of ß- and a-FeSi2 due to the implantation
(200 keV, 3 x 1017 cm-2, 350 °C) and a complete transition of the mixture
to the ß-and the a-phase after annealing at 900 °C for 18 h and
1150 °C for 1 h, respectively. The iron concentration profiles were
determined with Auger electron sputter depth profiling. The profile of the
as-implanted sample is Gaussian shaped and boradened after annealing at 900
°C to a pleateau-like profile. For the sample annealed at 1150 °C
only a slight broadening occurs and depth depending fluctuations of the iron
concentration can be observed. Investigations with scanning Auger electron
spectroscopy show in the case of the as-implanted sample only slight fluctuations
of the iron distribution in the center of the profile. After annealing at
900 °C large separated ß-FeSi2 precipitates grow due to the process
of Ostwald ripening. At 1150 °C Ostwald ripening and coalescence of
the precipitates occur and a wide extended penetration a-FeSi2 network structure
is formed. It is the first time that such large iron disilicide structures
could be proved by scanning Auger electron spectroscopy.
  • Applied Physics Letters 69 (1996) 3176 - 3178

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Publ.-Id: 557