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Impurity gettering in damaged regions of Si produced by high energy ion implantation

Kögler, R.; Panknin, D.; Skorupa, W.; Werner, P.; Danilin, A.
Point defects and defect agglomerates are created by high
energy ion implantation into Si and subsequent annealing. These defects
are investigated by gettering of metal atoms and analysing the metal concentration
distribution. Beside a gettering layer at the projected ion range (Rp)
where the implant is deposited also a gettering layer is also found at
the Rp/2-position. This Rp/2-layer is related to implantation defects -
not to the implant atoms. It is thermally stable up to a temperature of
more than 1000 °C.
  • Contribution to external collection
    IIT '96, Austin, Texas, USA. 11th Int. Conf. Ion Implantation Technology; The Inst. of Electrical and Electronics Engineers, Piscataway, USA, 1997, p. 679

Permalink: https://www.hzdr.de/publications/Publ-561
Publ.-Id: 561