Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication
Structural studies on ion implanted semiconductors using x-ray synchrotron radiation: strain evolution and growth of nanocrystals
Eichhorn, F.; Gaca, J.; Heera, V.; Schell, N.; Turos, A.; Weishart, H.; Wojcik, M.;
Modification of semiconductor materials by ion implantation is a well-established technological process. It can modify semiconductor material by producing crystal lattice defects as well as by alloying the substrate with the implant. The first introduces stress/strain into material or mixing of the constituents. The second effect leads to semiconductor doping or creation of new phases. Precise control of structural properties are crucial for technological applications. We present here, how various methods of x﷓ray scattering can be used for structural studies on such materials for optimization of the ion beam treatment of semiconductors. In some cases also complementary techniques like RBS/c were used.
As+ ions with an energy of 1.2 MeV were implanted into InP single crystals and epitaxial layers. Due to the ion induced strain, interplanar spacing in the growth direction decreases with increasing ion dose. Important recovery of radiation damage was observed upon prolonged storage at RT. Furthermore, patterned ion implantation is used for modification of lateral regions. XRD revealed that the presence of a masked region produces strain variations across the sample. RBS/c analysis showed that such an edge effect is independent on implantation conditions.
Silicon carbide and diamond are semiconductor materials for high temperature, high frequency and high power applications. However, a heavy p-type doping of SiC is difficult and a sufficient n-type doping of diamond was not yet realized. Therefore, the fabrication of diamond-SiC heterostructures by ion beam synthesis (IBS) is a new approach to novel devices. It was found that the synthesized nanocrystals grow in the surrounding single crystalline matrix highly oriented. The crystal size and shape, their strain and strain fluctuation vary in dependence on the implantation parameters like dose, dose rate and substrate temperature. The lattice damage of the matrix may be minimized by high temperature treatment.
Keywords: ion implantation; InP; SiC; diamond
  • Lecture (Conference)
    Vth International Conference on “Ion Implantation and Other Applications of Ions and Electrons“ – ION2004, Kazimierz Dolny, Poland, June 14 - 17, 2004

Publ.-Id: 6169 - Permalink