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Incident Ion Monitoring during Plasma Immersion Ion Implantation by Direct Measurements of High Energy Secondary Electrons

Nakamura, K.; Mändl, S.; Brutscher, J.; Günzel, R.; Möller, W.
The present paper investigated time-resolved incident ion monitoring during PIII processes on the basis of high energy secondary electron measurements with scintillation technique. Taking into consideration the sheath geometry and a secondary electron emission coefficient of the target material, the experimental data were in a good agreement with theoretical predictions for dependences on target-voltage, pressure and plasma density.
  • Lecture (Conference)
    3rd International Workshop on Plasma - Based Ion Implantation (PBII), Dresden, Germany, Sept. 16-18 1996

Permalink: https://www.hzdr.de/publications/Publ-683
Publ.-Id: 683