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Conductive Tungsten-Based Layers Synthesized by Ion Implantation into 6H-Silicon Carbide

Weishart, H.; Schöneich, J.; Voelskow, M.; Renkewitz, S.; Skorupa, W.
We studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1.2×10(17) W(+)cm(-2) at temperatures between 200°C and 400°C. The influence of implantation temperature on the distribution of W in SiC was investigated and compared to results obtained earlier from room temperature (RT) and 500°C implants. Rutherford backscattering spectrometry (RBS) was employed to study the structure and composition of the implanted layers. Implantation at temperatures between RT and 300°C did not influence the depth distribution of C, Si and W. The W depth profile shows a conventional Gaussian shape. Implanting at higher temperatures led to a more confined W rich layer in the SiC. This confinement is explained by Ostwald ripening which is enabled during implantation at temperatures above 300°C. The depth of the implantation induced damage decreases slightly with increasing implantation temperature, except for 400°C implantation. The amount of damage, however, is significantly reduced only for implantation at 500°C.
  • Materials Research Society symposium proceeding 438 (1997) pp. 283-288 (MRS 1996 Fall Mtg)

Permalink: https://www.hzdr.de/publications/Publ-753
Publ.-Id: 753