Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
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HeT-SiC-05International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor DevicesApril 26 to May 1, 2005,Hotel Erbgericht Krippen / Germany- Selected Contributions -Brauer, G.; Skorupa, W.; (Editors)
This report collects selected outstanding scientific and technological results obtained within the frame of the European project FLASiC (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers are reported too.
Keywords: beta-silicon carbide, biocompatibility, biosensor, doped metal oxide, epitaxy, flash lamp annealing, heterostructure, high-temperature device, hotplate, ion implantation, luminescence, magnetic ion, misfit defect, pulsed laser deposition, resonator, sensor, silicon carbide, simulation, stress, surface melting, zinc oxide
Wissenschaftlich-Technische Berichte / Helmholtz-Zentrum Dresden-Rossendorf; FZR-433 2005