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HeT-SiC-05International Topical Workshop on Heteroepitaxy of 3C-SiC on Silicon and its Application to Sensor DevicesApril 26 to May 1, 2005,Hotel Erbgericht Krippen / Germany- Selected Contributions -

Brauer, G.; Skorupa, W.; (Editors)
This report collects selected outstanding scientific and technological results obtained within the frame of the European project “FLASiC” (Flash LAmp Supported Deposition of 3C-SiC) but also other work performed in adjacent fields. Goal of the project was the production of large-area epitaxial 3C-SiC layers grown on Si, where in an early stage of SiC deposition the SiC/Si interface is rigorously improved by energetic electromagnetic radiation from purpose-built flash lamp equipment developed at Forschungszentrum Rossendorf. Background of this work is the challenging task for areas like microelectronics, biotechnology, or biomedicine to meet the growing demands for high-quality electronic sensors to work at high temperatures and under extreme environmental conditions. First results in continuation of the project work – for example, the deposition of the topical semiconductor material zinc oxide (ZnO) on epitaxial 3C-SiC/Si layers – are reported too.
Keywords: beta-silicon carbide, biocompatibility, biosensor, doped metal oxide, epitaxy, flash lamp annealing, heterostructure, high-temperature device, hotplate, ion implantation, luminescence, magnetic ion, misfit defect, pulsed laser deposition, resonator, sensor, silicon carbide, simulation, stress, surface melting, zinc oxide
  • Open Access Logo Wissenschaftlich-Technische Berichte / Helmholtz-Zentrum Dresden-Rossendorf; FZR-433 2005
    ISSN: 1437-322X


Publ.-Id: 7616