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Fe implanted ferromagnetic ZnO

Potzger, K.; Zhou, S. Q.; Reuther, H.; Mücklich, A.; Eichhorn, F.; Schell, N.; Skorupa, W.; Fassbender, J.ORC; Helm, M.; Herrmannsdörfer, T.; Papageorgiou, T. P.
The origin of ferromagnetism in ZnO single crystals implant-doped with Fe is investigated using X-ray diffraction, transmission electron microscopy, superconducting quantum interference device magnetometry and Mössbauer spectroscopy. For an ion fluence of 4×1016 ions per cm2 and an implantation temperature of 620 K, Fe nanoparticles are responsible for room-temperature ferromagnetism of the ZnO single crystals. On the other hand Fe ions implanted with an ion fluence of 4×1015 ions per cm2 at a temperature of 253 K develop a ferromagnetic coupling within the host matrix. Consequently only high resolution methods allow to rule out secondary phases in doped magnetic semiconductors.
Keywords: diluted magnetic semiconductors, ZnO, implant doping
  • Applied Physics Letters 88(2006)5, 052508

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Permalink: https://www.hzdr.de/publications/Publ-7655
Publ.-Id: 7655