Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

2 Publications
Rare earth ion implantation for silicon based light emission: From infrared to ultraviolet (invited)
Skorupa, W.; Sun, J. M.; Prucnal, S.; Rebohle, L.; Gebel, T.; Nazarov, A. N.; Osiyuk, I. N.; Dekorsy, T.; Helm, M.;
Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were incorporated into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). The silicon dioxide layer did not contain silicon nanoclusters. Efficient electroluminescence was obtained from UV to infrared with a transparent top electrode made of indium-tin oxide. The electroluminescence properties were studied with respect to the luminescence spectra, decay time, impact excitation, cross relaxation (Tb3+), and power efficiency. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies well above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Moreover, we demonstrate photo- and electroluminescence in correlation to charge trapping characteristics for Er-rich MOSLEDs with a varying silicon cluster content. Finally, application aspects to the field of biosensing will be discussed.
Keywords: Silicon-based light emission, Ion implantation, Rare earth atoms.
  • Contribution to proceedings
    MRS Spring Meeting, 29.03.2005, San Francisco, USA
    Materials Research Society Symposium Proceedings 866(2005) V4.1.1/FF4.1.1, V4.1.1/FF4
  • Invited lecture (Conferences)
    Materials Research Society Spring Meeting, 29.03.-01.04.2005, San Francisco, USA

Publ.-Id: 8187