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2 Publications
Hydrogen release and defect formation during heat treatments of SiNx:H/a-Si:H double passivation layer on c-Si substrate
Ulyashin, A. G.; Bentzen, A.; Diplas, S.; Suphellen, A.; Gunnaes, A. E.; Olsen, A.; Svensson, B. G.; Marstein, E. S.; Holt, A.; Grambole, D.; Sauar, E.;
The quality and temperature stability of surface passivation of silicon by a double layer consisting of a hydrogenated amorphous silicon thin film capped by a silicon nitride anti-reflection coating are studied. It is established that the passivation effect of the double layer can be significantly enhanced after short annealing for temperatures up to about 500 °C, whereas annealing at higher temperatures results in degradation of the passivation properties. It is found that the increased effective recombination lifetime after annealing at temperatures below 500 ºC results from hydrogen redistribution in the interface region. Furthermore, presence of interfacial structural defects formed due to hydrogen release at temperatures around 600 ºC, is believed to be the cause of the lifetime decrease after heat treatments at higher temperatures.
  • Poster
    2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, 05.-12.05.2006, Hawaii, USA
  • Contribution to proceedings
    2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, 05.-12.05.2006, Hawaii, USA
    IEEE Catalog Number 06CH37747C, 1-4244-0017-1, 1354-1357

Permalink: https://www.hzdr.de/publications/Publ-8234
Publ.-Id: 8234