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Solid-state nanocluster formation of praseodymium compounds in silicon and silicon dioxide
Kögler, R.; Mücklich, A.; Eichhorn, F.; Posselt, M.; Reuther, H.; Skorupa, W.;
Nanocluster of Pr compounds were formed in a silicon-on-insulator (SOI) structure by ion beam synthesis. The processes of ion-induced atomic mixing, phase segregation, texturing, and nanocluster formation were investigated by transmission electron microscopy, Auger electron spectroscopy and X-ray diffraction. After annealing at 900°C an array of Si precipitates is formed in SiO2. The size distribution of Si precipitates corresponds to the concentration profile of excess Si atoms in SiO2. Implanted Pr atoms are trapped at the Si/SiO2 interface around the Si precipitates and decorate them. During annealing at 1100°C crystalline nanocluster of Pr9.33Si6O26 or Pr2Si2O7 silicate are formed. In the top-Si-layer a narrow layer of Pr compound nanocluster is formed by self-organization rather equidistant of the Si/SiO2 interface. Pr oxide (Pr2O3), the most desired high-k material, was not definitely verified. The predominant process in solid-state synthesis of Pr compounds is Pr silicate formation. It provides both, a high atomic package density and a low reordering energy.
Keywords: Ion beam synthesis, high-k materials, Pr compounds, Si, nanocluster
  • Journal of Applied Physics 100(2006), 104314

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Publ.-Id: 8312