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Investigation of the damage induced by 200 keV Ge+ ion implantation in 6H-SiC

Pacaud, Y.; Skorupa, W.; Perez-Rodriguez, A.; Brauer, G.; Stoemenos, J.; Barklie, R.
  • Nuclear Instruments and Methods in Physics Research B 112 (1996) pp. 321-324

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Permalink: https://www.hzdr.de/publications/Publ-890
Publ.-Id: 890