Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

1 Publication
Deep level defects in He-implanted n-6H-SiC studied by deep level transient spectroscopy
Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Wu, H. S.; Brauer, G.; Anwand, W.; Skorupa, W.;
Deep level defects in He-implanted n-6H-SiC are studied by deep level transient spectroscopy.
Keywords: deep levels, SiC, defects, DLTS, ion implantation
  • Lecture (Conference)
    Materials Research Society (MRS), 2004 Spring Meeting, 12.-16.04.2004, San Francisco/ CA, USA

Publ.-Id: 9900 - Permalink