Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Cathodoluminescence of Ion-Implanted Silica Layers

Salh, R.; Fitting-Kourkoutis, L.; Schmidt, B.; Fitting, H.-J.

Scanning electron microscopy (SEM) and cathodoluminescence (CL) in combination with scanning transmission electron microscopy (STEM) have been used to investigate thermally grown amorphous silicon dioxide layers implanted isoelectronically with group IV ions (C+, Si+, Ge+, Sn+, Pb+) as well as with group VI ions (O+, S+, Se+).

Keywords: ion implanted SiO2; SEM; CL; STEM

  • Microscopy and Microanalysis 13(2007)Suppl. 3, 328-329

Publ.-Id: 10526