Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Investigation of Dwell-Time Effects on the Cobalt Disilicide Formation Using Focused Ion Beam Implantation

Hausmann, S.; Bischoff, L.; Teichert, J.; Grambole, D.; Herrmann, F.; Möller, W.

The influence of dwell-time effects on the formation of CoSi2 layers was investigated. The layers were produced on Si(111) and Si(100) by ion beam synthesis using a focused ion beam system. The experiments show that the dwell-time has a strong influence on the formation process of the cobalt disilicide films. In order to obtain high quality films suitable for applications short dwell-time (about 1µs) are necessary.

  • Microelectronic Engineering 41/42 (1998) 233-236
  • Lecture (Conference)
    Int. Conf. Micro- and Nano-Engineering, MNE ´97, Athens, Greece, Sept. 15 - 18, 1997

Publ.-Id: 1174