Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

NEMS structures on SOI by writing FIB implantation and subsequent anisotropic wet chemical etching

Bischoff, L.; Schmidt, B.; Lange, H.

The further miniaturization of silicon nanomechanical structures in combination with the highly developed microelectronic technology at the micro- and nanometer level will lead to a new generation of nano-electro-mechanical systems (NEMS). A modern technique to fabricate such three-dimensional structures is the combination of high-concentration p-type doping of silicon by high resolution writing implantation using a focused ion beam (FIB) and subsequent anisotropic and selective wet chemical etching. FIB-patterned and chemically etched 3D Si structures with nanoscale thickness and width have been fabricated using 30 keV Ga+ ion implantation and subsequent anisotropic etching in KOH/H2O solution on Silicon-On-Insulator (SOI) substrates. Design and fabrication considerations to achieve freestanding Si structures, like nanowires and -bridges are discussed and some typical structures are shown. Electrical measurements are demonstrated which reveal a broad spectrum in the field of sensor applications.

Keywords: nano-electro-mechanical systems; focused ion beam; anisotropic etching; sensor applications

  • Lecture (Conference)
    Ionenstrahlphysik und Nanotechnologie, 11.-12.04.2008, Darmstadt, Germany

Publ.-Id: 12160