The Formation of Narrow Nanocluster Bands in Ge-Implanted SiO2-Layers

The Formation of Narrow Nanocluster Bands in Ge-Implanted SiO2-Layers

von Borany, J.; Grötzschel, R.; Heinig, K.-H.; Markwitz, A.; Schmidt, B.; Skorupa, W.; Thees, H.-J.

The paper describes the formation of Ge nanocrystals in thin thermally grown SiO2 layers (dox=<100 nm) using implantation of 1015 - 2x1016 Ge+/cm2 and subsequent annealing. Although the implanted Ge depth profile is distributed over almost the whole SiO2 layer, a very narrow band (typical width 5 nm) of Ge nanoclusters very close but well-separated to the Si/SiO2-interface is formed by self-organization under specified annealing conditions. A possible mechanism for this self-organization process is discussed including nucleation phenomena, Ostwald ripening and defect-stimulated interface processes. Simple MOS-structures were prepared and the effect of charge storage inside the clusters has been derived from C-V characteristics.

Keywords: Ge nanocrystals; SiO2 films; ion beam synthesis; electron microscopy; non-volatile memory

  • Solid-State Electronics 43 (1999) 1159-1163
    DOI: 10.1016/S0038-1101(99)00040-4
    Cited 51 times in Scopus
  • Lecture (Conference)
    European Materials Research Society Spring Meeting (E-MRS'98); Symposium N, Session V: Nanomaterials; June 16-19, 1998, Strasbourg, France

Publ.-Id: 1260