Implantation induced point defects and their role in silicon-on-insulator (SOI) materials processing

Kögler, R.

Implantation induced point defects and their role in silicon-on-insulator (SOI) materials processing

Kögler, R.

The origin of the distribution of ion implantation induced point defects in Si and their effect on the oxygen redistribution during SIMOX processing is discussed.

Keywords: Ion implantation; SOI; SIMOX

Lecture (Conference)
Workshop Ionenstrahlphysik, 06.-08.04.2009, Jena, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-12680
Publ.-Id: 12680