Precipitation, Ripening and Chemical Effects During Annealing of Ge⁺ Implanted SiO₂ Layers

Precipitation, Ripening and Chemical Effects During Annealing of Ge⁺ Implanted SiO₂ Layers

Heinig, K.-H.; Schmidt, B.; Markwitz, A.; Grötzschel, R.; Strobel, M.; Oswald, S.

• Lecture (Conference)
  11th Int. Conf. Ion Beam Modification of Materials, Amsterdam, The Netherlands, Aug. 31 - Sept. 4, 1998
• Nuclear Instruments and Methods in Physics Research B 148 (1999) 969-974
  DOI: 10.1016/S0168-583X(98)00862-3
  Cited 120 times in Scopus

Permalink: https://www.hzdr.de/publications/Publ-1288
Publ.-Id: 1288