Characterization of Defects in Ion Implanted SiC by Slow Positron Implantation Spectroscopy and Rutherford Backscattering
Characterization of Defects in Ion Implanted SiC by Slow Positron Implantation Spectroscopy and Rutherford Backscattering
Anwand, W.; Brauer, G.; Coleman, P. G.; Voelskow, M.; Skorupa, W.
-
Applied Surface Science 149 (1999) 148-150
DOI: 10.1016/S0169-4332(99)00191-9
Cited 3 times in Scopus -
Lecture (Conference)
8th Int. Workshop on Slow Positron Beam Techniques for Solids and Surfaces (SLOPOS-8), Cape Town, Sept. 6 - 12, 1998 -
Lecture (Conference)
30th Polish Seminar on Positron Annihilation, Jarnoltowek, Sept. 17-21, 1998
Permalink: https://www.hzdr.de/publications/Publ-1291
Publ.-Id: 1291