Transition metal diffusion in diluted magnetic Si and GaAs prepared by pulsed laser processing


Transition metal diffusion in diluted magnetic Si and GaAs prepared by pulsed laser processing

Bürger, D.; Seeger, M.; Zhou, S.; Skorupa, W.; Schmidt, H.

Starting from a random or ordered distribution of 0.8, 1.6, 3.7 and 12.5 % dopants over the lattice sites of a simple cubic host lattice, we estimate the fraction of unclustered dopants after pulsed laser quenching of different host:dopant systems. Initial clustering events are simulated with a greedy algorithm implemented in a Monte-Carlo study. The greedy algorithm gives adequate results for dopants with low diffusity and low solubility.
The absolute initial dopant concentration and declustering strongly in influence the kinetics of clustering. Particularly, we consider transition metal doped Si and GaAs after pulsed laser annealing, which are of interest for spintronics applications. An uncritical integral diffusion of Mn in GaAs:Mn and a tendency of Mn to form silicides in Si:Mn are simulated. These results are in good agreement with experimental observations.

Keywords: diluted magnetic semiconductor; implantation; pulsed laser annealing; ferromagnetism; secondary phase formation; nanoscale clustering

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Publ.-Id: 14792