Spin-polarized hole transport in pulsed laser annealed Ge:Mn up to 30 K

Spin-polarized hole transport in pulsed laser annealed Ge:Mn up to 30 K

Bürger, D.; Zhou, S.; Kovacs, G. J.; Schmidt, H.

The incorporation of transition metals dopants in semiconductors over their solubility limit is the main challenge for the fabrication of diluted ferromagnetic semiconductors. Low temperature molecular beam epitaxy (LT-MBE) is the standard technique for the fabrication of GaAs:Mn. Nevertheless, for Ge:Mn [1] the LT-MBE approach seems to be not successful to reach hole concentrations necessary for hole mediated ferromagnetism. On the other hand, pulsed laser annealing is a successful nonequilibrium annealing method and a promising technique for the fabrication of diluted Ge:Mn [2] and for III-V semiconductors, e.g. GaAs:Mn [3]. Recently we fabricated a ca. 100 nm thick Ge:Mn film by low temperature Mn-implantation followed by pulsed laser annealing and observed hole-mediated ferromagnetism up to 30 K via SQUID magnetization as well as magnetotransport measurements. The anisotropy of ferromagnetic Ge:Mn films will be discussed. Moreover, the Ge:Mn films show a remanent magnetization up to 220 K which is lower than the Curie temperature of typical Mn_xGe_y clusters [1]. The confirmation of spin-polarized hole transport up to 220 K becomes difficult because at elevated temperatures the conductivity is mainly determined by the Ge substrate.
[1] M. Jamet et al., Nature. Mat. 5, 653 (2006)
[2] Shengqiang Zhou et al., PRB 81, 165204 (2010)
[3] Danilo Bürger et al., PRB 81, 115202 (2010

Keywords: Ge:Mn; implantation; pulsed laser annealing; ferromagnetic semiconductor

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