Structural investigations of ion beam doped silicon nanowires

Structural investigations of ion beam doped silicon nanowires

Grenzer, J.; Roshchupkina, O.; Kögler, R.; Das Kanungo, P.; Werner, P.

For the development of nano-optical devices nano wires (NW) are of emerging interest. One of the most important steps in the fabrication of Si devices is doping using ion beam implantation. However, this may lead to a distortion of the NW’s crystalline structure or even to an amorphization. A subsequent annealing procedure is necessary to recover the crystalline structure. The advantage of implanted Si NW’s is that the electrical conductivities are significantly higher than MBE-grown in-situ doped ones [1]. NW’s of about 100nm in diameter and 100..400 nm in length, nominally undoped, were MBE grown on Si(111) using Au as a growth-initiator. We followed the structural changes of the NW’s caused by implantation and annealing. We used rapid thermal annealing up to a temperature of 1100∘ C of about 30 seconds to remove a possible damage induced by implantation. Diffraction experiments were carried out at the ID01 ESRF beamline using a microfocused X-ray beam in combination with a 2D detector to obtain 3D diffraction patterns. Our experiments have shown that defect structure and form of the investigated NW’s change after implantation and annealing.

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  • Lecture (Conference)
    DPG Spring Meeting, 13.-18.03.2011, Dresden, Germany

Publ.-Id: 16457