Hyperdoping Si with deep level impurities by ion implantation and short-time annealing

Hyperdoping Si with deep level impurities by ion implantation and short-time annealing

Liu, F.; Prucnal, S.; Gao, K.; Khalid, M.; Skorupa, W.; Helm, M.; Zhou, S.

Impurities play an important role in determining the electrical, optical and structural properties of semiconductors. It has been proposed that deep level impurities, such as Titanium (Ti) or chalcogens in Si, can induce an impurity band inside the bandgap at high enough doping concentration [1, 2]. The insertion of an impurity band can enhance the absorption at a broader wavelength range and leads to applications in the so-called intermediate band solar cell [3]. In the present work, we use ion implantation combined with short-time annealing to realize hyperdoping of Ti and chalcogens in Si. The structural, electrical and optical properties were determined by X-raydiffraction and Rutherford backscattering spectroscopy/channeling, electrical transport measurement and Raman spectroscopy. Analysis shows that the implanted Si layer can be recrystallized by both flashlamp and pulsed laser annealing. Ti ions mainly occupy the interstitial sites, while S and Se ions substitute the Si in the lattice. The consequent changes in electrical properties are also observed.

[1] J. Olea, G. González-Díaz, D. Pastor, I. Mártil, A. Martí, E. Antolín, and A. Luque, J. Appl. Phys. 109, 063718 (2011).
[2] Brion P. Bob, Atsushi Kohno, Supakit Charnvanichborikarn, Jeffrey M. Warrender, Ikurou Umezu, Malek Tabbal, James S. Williams, and Michael J. Aziz J. Appl. Phys. 107, 123506 (2010)
[3] A. Luque and A. Martí, Phys. Rev. Lett. 78, 5014 (1997).

Keywords: Ion implantation; deep level impurities

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