Depth distribution of point defects in Si bombarded by high-energy N⁵⁺ and Si⁵⁺ ions

Depth distribution of point defects in Si bombarded by high-energy N⁵⁺ and Si⁵⁺ ions

Dvurechenskii, A. V.; Karanovich, A. A.; Grötzschel, R.; Herrmann, F.; Kögler, R.; Rybin, A. V.

• Phys. Solid State 40 (1998) 195

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Publ.-Id: 2150