Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
Polycrystalline ZnTe thin film on silicon synthesized by pulsed laser deposition and subsequent pulsed laser melting
Xu, M.; Gao, K.; Wu, J.; Cai, H.; Yuan, Y.; Prucnal, S.; Hübner, R.; Skorupa, W.; Helm, M.; Zhou, S.
ZnTe thin films on Si substrates have been prepared by pulsed laser deposition and subsequent pulsed laser melting (PLM) treatment. The crystallization during PLM is confirmed by Raman scattering, x-ray diffraction and room temperature photoluminescence (PL) measurements. The PL results show a broad peak at 574 nm (2.16 eV), which can be assigned to the transitions from the conduction band to the acceptor level located at 0.145 eV above the valence band induced by zinc-vacancy ionization. Our work provides an applicable approach to low temperature preparation of crystalline ZnTe thin films.
Keywords: ZnTe; Pulsed laser melting
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 23505) publication
Materials Research Express 3(2016), 036403
Online First (2016) DOI: 10.1088/2053-1591/3/3/036403
Cited 7 times in Scopus