Optical contrast formation in ta-C films by ion implantation

Optical contrast formation in ta-C films by ion implantation

Berova, M.; Sandulov, M.; Tsvetkova, T.; Szekeres, A.; Terziyska, P.; Kitova, S.; Böttger, R.; Bischoff, L.

Tetrahedral amorphous carbon (ta-C) thin films (d ~ 40 nm), deposited by filtered cathodic vacuum arc (FCVA) method, have been implanted with Ga+ ions with energy 20 keV and ion fluences 3xE14 and 3xE15 cm-2. The implantation induced modification of the films structure is reflected in a considerable change of their optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from optical measurements. This shift is accompanied by a considerable increase of the absorption coefficient in the photon energy range (0.5 ÷ 3.0 eV). The observed effects could be attributed both to additional defect generation and increased graphitization, as well as by gallium colloids formation. The optical contrast thus obtained (between implanted and unimplanted film material) could be of use in the area of high-density optical data storage using focused Ga+ ion beams.

Keywords: ta-C films; Ga implantation; optical properties

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Publ.-Id: 26090