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Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Prucnal, S.; Berencén, Y.; Wang, M.; Grenzer, J.; Voelskow, M.; Hübner, R.; Yamamoto, Y.; Scheit, A.; Bärwolf, F.; Zviagin, V.; Schmidt-Grund, R.; Grundmann, M.; Żuk, J.; Turek, M.; Droździel, A.; Pyszniak, K.; Kudrawiec, R.; Polak, M. P.; Rebohle, L.; Skorupa, W.; Helm, M.; Zhou, S.;
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge−Sn alloys. The heavily doped n-type Ge−Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge−Sn layers and to modify the lattice parameter of P-doped Ge−Sn alloys. The strain engineering in heavily-P-doped Ge−Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge−Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1 × 10^20 cm the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.
Keywords: Ge, GeSn, n-type doping, ion implantation, x-ray diffraction, Raman spectroscopy, strain


Publ.-Id: 28570 - Permalink