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The Structural and Compositional Changes of Graphene Oxide Induced by Irradiation With 500 keV Helium and Gallium Ions
Malinsky, P.; Macková, A.; Florianová, M.; Cutroneo, M.; Hnatowicz, V.; Bohácová, M.; Szokölová, K.; Böttger, R.; Sofer, Z.;
Structural and compositional modification of 2D materials as graphene or graphene oxide (GO) are topical objects of nowadays due to their many technological applications. Ion irradiation of graphene based materials, as a method for improvement of their surface properties started recently. Ion mass, energy, and fluence are crucial for forming of GO electrical, optical, and mechanical properties. In this work, the GO films are irradiated with 500 keV He and Ga ions to different fluences. The ions with different masses and electronic/nuclear stopping power ratios, are chosen with the aim to examine mechanisms of radiation defect creation. The elemental composition of the GO is investigated using Rutherford back-scattering (RBS) and elastic recoil detection analysis (ERDA) techniques. The structural and chemical changes are characterized by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy and the electrical properties are determined by two-point method. The RBS and ERDA analyses indicate deoxygenation and dehydrogenation of the irradiated GO surface. The thickness and the degree of O and H depletion depend on the ion mass. XPS and Raman spectroscopy show removal of oxygen functionalities and structural modifications leading to a decrease in the surface resistivity.
Keywords: graphene oxide, ion Irradiation, Helium, Gallium, structure, composition

Publ.-Id: 28598 - Permalink