Detection of metastable defective regions in ion-implanted Si by means of metal gettering
Detection of metastable defective regions in ion-implanted Si by means of metal gettering
Kögler, R.; Posselt, M.; Yankov, R. A.; Kaschny, J. R.; Werner, P.; Danilin, A. B.; Skorupa, W.
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Contribution to external collection
MRS Symp. Proc. 469 (1997) 224
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Publ.-Id: 3099