Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf

Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation

Posselt, M.; Teichert, J.; Bischoff, L.; Hausmann, S.

The strong influence of dose rate and implantation temperature on the dose dependence of the shape of Ge channeling implantation profiles is demonstrated for the first time. Applying a focused ion beam (FIB) system allows the use of a very high (1018 cm-2s-1) and a very low (1010-1011 cm-2s-1) dose rate. Implantations are performed at R.T. and at 250°C. At the high dose rate and R.T. the dose rate dependence of the profile shape is found to be most pronounced. Atomistic computer simulations using a relatively simple damage buildup model can explain the effects observed. It is shown that at R.T. defect relaxation processes can last up to 1 s, which is longer than assumed so far. The lifetime of implantation defects at 250°C is estimated to be in the order of 10s.

Keywords: Ion implantation; focused ion beam; computer simulation; defects; channeling

  • Lecture (Conference)
    Symposium R, E-MRS Spring Meeting, May 30- June 2, 2000, Strasbourg
  • Nuclear Instruments and Methods in Physics Research B 178 (2001) 170-175

Publ.-Id: 3377