Publications Repository - Helmholtz-Zentrum Dresden-Rossendorf
Fabrication and Electrical Characterisation of Junctionless Nanowire Transistors for Detection of Atmospheric Radicals and Other Gases
Ghosh, S.; Bilal Khan, M.; Vardhan, V.; Kentsch, U.; Prucnal, S.; Biswas, S.; Holmes, J.; Erbe, A.; Georgiev, Y.
Silicon junctionless nanowire transistors (JNTs) have shown excellent sensitivity to record-low concentrations of the protein streptavidin in liquid phase. However, JNTs have not yet been tested for sensing in gas phase. Here we present the fabrication and initial electrical characterisation of JNT-based electronic sensors for detection of atmospheric free radicals such as hydroxyl (•OH) and nitrate (•NO3), which are the main drivers of chemical processes in the atmosphere. The aim of this work is to develop small, low-cost JNT-based nanosensors for radical detection. Silicon-on-insulator wafers were doped by ion implantation and flash-lamp annealing. Device patterning was based on electron beam lithography, inductively-coupled reactive ion etching, metal deposition and lift-off. Initial electrical characterisation and gas sensing experiments on fabricated devices proved their good performance and potential suitability for detection of atmospheric free radicals
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 36377) publication
DPG Meeting of the Condensed Matter Section (SKM), 04.-09.09.2022, Regensburg, Germany