High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation
High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation
Ueda, M.; Reuther, H.; Günzel, R.; Beloto, A. F.; Abramof, E.; Berni, L. A.
PIII was used to dope Si (001) wafers with nitrogen and carbon at high doses, relying on two PIII systems: one at the FZR and the other at INPE.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 175-177 (2001) 715-720
Permalink: https://www.hzdr.de/publications/Publ-3999
Publ.-Id: 3999
