Ion beam synthesis of SiC in Si: Real structure analysis at ROBL

Ion beam synthesis of SiC in Si: Real structure analysis at ROBL

Eichhorn, F.

Keywords: Ion beam synthesis; 3C-SiC; Si(001); x-ray diffraction; synchrotron x-rays

• Lecture (others)
  ESRF Monday Seminar, April 23, 2001

Permalink: https://www.hzdr.de/publications/Publ-4344
Publ.-Id: 4344